Gao, Q and Joyce, HJ and Paiman, S and Kang, JH and Tan, HH and Kim, Y and Smith, LM and Jackson, HE and Yarrison-Rice, JM and Zhang, X and Zou, J and Jagadish, C (2009) Nanowires for optoelectronic device applications. Physica Status Solidi (C) Current Topics in Solid State Physics, 6. pp. 2678-2682. ISSN 1862-6351Full text not available from this repository.
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for GaAs and InP nanowires on the crystal quality were studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires via either two-temperature procedure, or by controlling V/III ratio or growth rate. The crystal structure of InP nanowires, ie, WZ or ZB, can also be engineered by just controlling the V/III ratio. © 2009 Wiley-VCH Verlag GmbH & Co. KGaA.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||15 Dec 2015 13:21|
|Last Modified:||10 Feb 2016 01:11|