Joyce, HJ and Paiman, S and Gao, Q and Tan, HH and Kim, Y and Smith, LM and Jackson, HE and Yarrison-Rice, JM and Zhang, X and Zou, J and Jagadish, C (2009) III-V compound semiconductor nanowires. 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009. pp. 59-60.Full text not available from this repository.
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter. © 2009 IEEE.
|Uncontrolled Keywords:||III-V compound semiconductors MOCVD Nanowires|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:08|
|Last Modified:||08 Dec 2014 02:18|