CUED Publications database

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Gao, Q and Joyce, HJ and Paiman, S and Tan, HH and Kim, Y and Smith, LM and Jackson, HE and Yarrison-Rice, JM and Zhang, X and Zou, J and Jagadish, C (2009) Epitaxy of III-V semiconductor nanowires towards optoelectronic devices. 2009 14th OptoElectronics and Communications Conference, OECC 2009.

Full text not available from this repository.

Abstract

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group. © 2009 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:08
Last Modified: 08 Dec 2014 02:18
DOI: 10.1109/OECC.2009.5219756