Gao, Q and Joyce, HJ and Paiman, S and Tan, HH and Kim, Y and Smith, LM and Jackson, HE and Yarrison-Rice, JM and Zhang, X and Zou, J and Jagadish, C (2009) Epitaxy of III-V semiconductor nanowires towards optoelectronic devices. 2009 14th OptoElectronics and Communications Conference, OECC 2009.Full text not available from this repository.
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group. © 2009 IEEE.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||18 May 2016 18:32|
|Last Modified:||24 May 2016 23:26|