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Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures

Paladugu, M and Zou, J and Guo, YN and Zhang, X and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Kim, Y (2009) Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures. Journal of Applied Physics, 105. ISSN 0021-8979

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Abstract

The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated by transmission electron microscopy. It has been found that Au catalysts preferentially stay on { 112 } B GaAs sidewalls. Since a {112} surface is composed of a {111} facet and a {002} facet and since {111} facets are polar facets for the zinc-blende structure, this crystallographic preference is attributed to the different interface energies caused by the different polar facets. We anticipate that these observations will be useful for the design of nanowire heterostructure based devices. © 2009 American Institute of Physics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 18 May 2016 18:32
Last Modified: 24 Aug 2016 01:45
DOI: