CUED Publications database

Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures

Paladugu, M and Zou, J and Guo, Y-N and Zhang, X and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Kim, Y (2008) Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures. Applied Physics Letters, 93. ISSN 0003-6951

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Abstract

The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowire heterostructures. Such formation of radial nanowire heterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures. © 2008 American Institute of Physics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:08
Last Modified: 08 Dec 2014 02:18
DOI: 10.1063/1.3033551