CUED Publications database

Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures

Paladugu, M and Zou, J and Guo, YN and Zhang, X and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Kim, Y (2008) Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures. Applied Physics Letters, 93. ISSN 0003-6951

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The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowire heterostructures. Such formation of radial nanowire heterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures. © 2008 American Institute of Physics.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:14
Last Modified: 22 May 2018 07:34