Paladugu, M and Zou, J and Guo, YN and Auchterlonie, GJ and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Kim, Y (2008) Failure and formation of axial nanowire heterostructures in vapor-liquid-solid growth. Materials Research Society Symposium Proceedings, 1058. pp. 1-7. ISSN 0272-9172Full text not available from this repository.
To observe the axial growth behavior of InAs on GaAs nanowires, InAs was grown for different growth durations on GaAs nanowires using Au nanoparticles. Through transmission electron microscopy, we have observed the following evolution steps for the InAs growth. (1) In the initial stages of the InAs growth, InAs clusters into a wedge shape preferentially at an edge of the Au/GaAs interface by minimizing Au/InAs interfacial area; (2) with further growth of InAs, the Au particle moves sidewards and then downwards by preserving an interface with GaAs nanowire sidewalls. The lower interfacial energy of Au/GaAs than that of Au/In As is attributed to be the reason for such Au movement. This downward movement of the Au nanoparticle later terminates when the nanoparticle encounters InAs growing radially on the GaAs nanowire sidewalls, and with further supply of In and As vapor reactants, the Au nanoparticle assists the formation of InAs branches. These observations give some insights into vapor-liquid-solid growth and the formation of kinks in nanowire heterostructures. © 2008 Materials Research Society.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
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|Date Deposited:||18 May 2016 18:32|
|Last Modified:||29 Aug 2016 04:45|