Zou, J and Paladugu, M and Guo, YN and Zhang, X and Auchterlonie, GJ and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Kim, Y (2008) Growth behavior of epitaxial semiconductor axial nanowire heterostructures. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 71-74.Full text not available from this repository.
In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires. © 2008 IEEE.
|Uncontrolled Keywords:||Crystal growth Epitaxy Heterostructues Nanowires Nucleation and growth Vapor-liquid-solid|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:08|
|Last Modified:||08 Dec 2014 02:18|