Joyce, HJ and Gao, Q and Kim, Y and Tan, HH and Jagadish, C and Zhang, X and Guo, Y and Zou, J and Fickenscher, MA and Perera, S and Hoang, TB and Smith, LM and Jackson, HE and Jan, MYR (2008) Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO. pp. 59-62.Full text not available from this repository.
We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices. © 2008 IEEE.
|Uncontrolled Keywords:||GaAs MOCVD Nanowire Photoluminescence|
|Depositing User:||Cron job|
|Date Deposited:||16 Jul 2015 14:07|
|Last Modified:||28 Nov 2015 12:43|