Perera, S and Fickenscher, MA and Jackson, HE and Smith, LM and Yarrison-Rice, JM and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C and Zhang, X and Zou, J (2008) Nearly intrinsic exciton lifetimes in single twin-free GaAsAlGaAs core-shell nanowire heterostructures. Applied Physics Letters, 93. ISSN 0003-6951Full text not available from this repository.
CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAsAlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation. © 2008 American Institute of Physics.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||15 Dec 2015 13:17|
|Last Modified:||04 May 2016 01:22|