Paladugu, M and Zou, J and Guo, Y-N and Zhang, X and Kim, Y and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C (2008) Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures. Applied Physics Letters, 93. ISSN 0003-6951Full text not available from this repository.
The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III elements with the catalyst material. © 2008 American Institute of Physics.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:46|
|Last Modified:||08 Dec 2014 02:18|