Joyce, HJ and Gao, Q and Kim, Y and Tan, HH and Jagadish, C (2007) Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition. 2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OMENS. pp. 187-188.Full text not available from this repository.
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic chemical vapour deposition. Binary GaAs, InAs and InP nanowires, and ternary InGaAs and AlGaAs nanowires, have been fabricated and characterised. A variety of axial and radial heterostructures have also been fabricated, including GaAs/AlGaAs core-multishell and GaAs/InGaAs superlattice nanowires. GaAs/AlGaAs core-shell nanowires exhibit strong photoluminescence as the AlGaAs shell passivates the GaAs nanowire surface reducing the surface nonradiative recombination. © 2007 IEEE.
|Uncontrolled Keywords:||Heterostructure MOCVD Nanowire|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:08|
|Last Modified:||08 Dec 2014 02:18|