Joyce, HJ and Gao, Q and Kim, Y and Tan, HH and Jagadish, C (2007) Growth, structural and optical properties of III-V nanowires for optoelectronic applications. 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. pp. 866-869.Full text not available from this repository.
We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures including GaAs/InGaAs superlattices, and GaAs/AlGaAs core-shell and core-multishell nanowires. © 2007 IEEE.
|Uncontrolled Keywords:||GaAs Heterostructure InP MOCVD Nanowire Photoluminescence|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:08|
|Last Modified:||08 Dec 2014 02:18|