Joyce, HJ and Kim, Y and Gao, Q and Tan, HH and Jagadish, C (2006) Growth, structural and optical properties of GaAs/AlGaAs Core/shell nanowires with and without quantum well shells. Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. pp. 450-453.Full text not available from this repository.
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs radial heterostructure nanowires, fabricated by metalorganic chemical vapour deposition. The effect of growth temperature on nanowire morphology is discussed. Strong photoluminescence is observed from GaAs nanowires with AlGaAs shells. Core/multishell nanowires, of GaAs cores clad in several alternating layers of thick AlGaAs barrier shells and thin GaAs quantum well shells, exhibit a blue-shifted photoluminescence peak believed to arise from quantum confinement effects. A novel two-temperature growth procedure for obtaining GaAs cores is introduced, and other nanowire heterostructures are addressed. © 2006 IEEE.
|Uncontrolled Keywords:||AlGaAs GaAs Heterostructure Nanowire Photoluminescence|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:08|
|Last Modified:||08 Dec 2014 02:18|