Gao, Q and Kim, Y and Joyce, HJ and Lever, P and Mokkapati, S and Buda, M and Tan, HH and Jagadish, C (2006) Quantum dots and nanowires for optoelectronic device applications. 2006 International Conference on Transparent Optical Networks, 2. pp. 242-245.Full text not available from this repository.
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper. ©2006 IEEE.
|Uncontrolled Keywords:||InGaAs Lasers Nanowire Quantum dots Selective area epitaxy|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:59|
|Last Modified:||05 Feb 2015 01:17|