CUED Publications database

Quantum dots and nanowires for photonics applications

Mokkapati, S and Joyce, HJ and Kim, Y and Gao, Q and Tan, HH and Jagadish, C (2006) Quantum dots and nanowires for photonics applications. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, 1. pp. 252-253.

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Abstract

We review our results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area metal organic chemical vapor deposition (MOCVD) is used to grow the active region with quantum dots emitting at different wavelengths for fabrication of the integrated devices. We will also review the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures grown by MOCVD. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with several alternating shells of AlGaAs and GaAs, exhibit strong photoluminescence. Axial segments of InGaAs have been incorporated within GaAs nanowires to form GaAs/InGaAs nanowire superlattices.

Item Type: Article
Uncontrolled Keywords: MOCVD Nanowires Photonics Quantum dots
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:08
Last Modified: 08 Dec 2014 02:18
DOI: 10.1109/NMDC.2006.4388857