CUED Publications database

Growth mechanism of truncated triangular GaAs nanowires

Zou, J and Wang, H and Auchterlonie, GJ and Paladugu, M and Gao, YN and Kim, Y and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C (2006) Growth mechanism of truncated triangular GaAs nanowires. Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. pp. 604-605.

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Abstract

During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires. © 2006 IEEE.

Item Type: Article
Uncontrolled Keywords: GaAs Lateral growth Metalorganic chemical vapor deposition Nanowire SEM TEM
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:08
Last Modified: 08 Dec 2014 02:18
DOI: 10.1109/ICONN.2006.340690