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Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition

Joyce, HJ and Kim, Y and Gao, Q and Tan, HH and Jagadish, C (2006) Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 172-175.

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Abstract

We report a two-temperature procedure for the growth of GaAs nanowires by metalorganic chemical vapour deposition. An initial high temperature step affords effective nucleation and promotes epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise nanowire tapering during growth. © 2006 IEEE.

Item Type: Article
Uncontrolled Keywords: Epitaxy GaAs Growth Nanowire Nucleation
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:08
Last Modified: 08 Dec 2014 02:18
DOI: 10.1109/COMMAD.2006.4429908