Joyce, HJ and Kim, Y and Gao, Q and Tan, HH and Jagadish, C (2006) Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 172-175.Full text not available from this repository.
We report a two-temperature procedure for the growth of GaAs nanowires by metalorganic chemical vapour deposition. An initial high temperature step affords effective nucleation and promotes epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise nanowire tapering during growth. © 2006 IEEE.
|Uncontrolled Keywords:||Epitaxy GaAs Growth Nanowire Nucleation|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:08|
|Last Modified:||08 Dec 2014 02:18|