Joyce, HJ and Kim, Y and Gao, Q and Tan, HH and Jagadish, C (2006) Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 172-175.Full text not available from this repository.
We report a two-temperature procedure for the growth of GaAs nanowires by metalorganic chemical vapour deposition. An initial high temperature step affords effective nucleation and promotes epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise nanowire tapering during growth. © 2006 IEEE.
|Uncontrolled Keywords:||Epitaxy GaAs Growth Nanowire Nucleation|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:57|
|Last Modified:||05 Feb 2015 01:15|