Titova, LV and Hoang, TB and Jackson, HE and Smith, LM and Yarrison-Rice, JM and Kim, Y and Kim, Y and Joyce, HJ and Tan, HH and Jagadish, C (2006) Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires. Applied Physics Letters, 89. ISSN 0003-6951Full text not available from this repository.
Temperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects. © 2006 American Institute of Physics.
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