Kim, Y and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C (2005) Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2005. pp. 455-456. ISSN 1092-8081Full text not available from this repository.
The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed. © 2005 IEEE.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
Div B > Solid State Electronics and Nanoscale Science
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:08|
|Last Modified:||08 Dec 2014 02:24|