CUED Publications database

Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition

Kim, Y and Joyce, HJ and Gao, Q and Tan, HH and Jagadish, C (2005) Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2005. pp. 455-456. ISSN 1092-8081

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Abstract

The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed. © 2005 IEEE.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:08
Last Modified: 08 Dec 2014 02:24
DOI: 10.1109/LEOS.2005.1548075