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Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film

Saito, I and Masuzawa, T and Kudo, Y and Pittner, S and Yamada, T and Koh, ATT and Chua, DHC and Mori, Y and Zahn, DRT and Amaratunga, GAJ and Okano, K (2013) Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film. Journal of Non-Crystalline Solids, 378. pp. 96-100. ISSN 0022-3093

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Abstract

A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se-As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105 of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. © 2013 Elsevier B.V.

Item Type: Article
Uncontrolled Keywords: Amorphous Nano-layer Photoconductor Photoelectric materials
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:45
Last Modified: 08 Dec 2014 02:18
DOI: 10.1016/j.jnoncrysol.2013.06.022