Saito, I and Masuzawa, T and Kudo, Y and Pittner, S and Yamada, T and Koh, ATT and Chua, DHC and Mori, Y and Zahn, DRT and Amaratunga, GAJ and Okano, K (2013) Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As<inf>2</inf>Se<inf>3</inf>) multi-layered thin film. Journal of Non-Crystalline Solids, 378. pp. 96-100. ISSN 0022-3093Full text not available from this repository.
A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se-As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105 of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. © 2013 Elsevier B.V.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 18:41|
|Last Modified:||20 Mar 2017 06:30|