Gamalski, AD and Perea, DE and Yoo, J and Li, N and Olszta, MJ and Colby, R and Schreiber, DK and Ducati, C and Picraux, ST and Hofmann, S (2013) Catalyst composition and impurity-dependent kinetics of nanowire heteroepitaxy. ACS Nano, 7. pp. 7689-7697.Full text not available from this repository.
The mechanisms and kinetics of axial Ge-Si nanowire heteroepitaxial growth based on the tailoring of the Au catalyst composition via Ga alloying are studied by environmental transmission electron microscopy combined with systematic ex situ CVD calibrations. The morphology of the Ge-Si heterojunction, in particular, the extent of a local, asymmetric increase in nanowire diameter, is found to depend on the Ga composition of the catalyst, on the TMGa precursor exposure temperature, and on the presence of dopants. To rationalize the findings, a general nucleation-based model for nanowire heteroepitaxy is established which is anticipated to be relevant to a wide range of material systems and device-enabling heterostructures.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:23|
|Last Modified:||12 May 2014 01:00|
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