Olle, VF and Wonfor, A and Sulmoni, LAM and Vasilèv, PP and Vasilèv, PP and Lamy, JM and Carlin, JF and Grandjean, N and Penty, RV and White, IH (2013) Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode. IEEE Photonics Technology Letters, 25. pp. 1514-1516. ISSN 1041-1135Full text not available from this repository.
We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively. © 1989-2012 IEEE.
|Uncontrolled Keywords:||Mode-locked lasers Semiconductor lasers Ultrafast lasers Visible lasers|
|Divisions:||Div B > Photonics|
|Depositing User:||Cron job|
|Date Deposited:||16 Jul 2015 13:24|
|Last Modified:||31 Aug 2015 07:41|