Lophitis, N and Antoniou, M and Udrea, F and Nistor, I and Rahimo, MT and Arnold, M and Wikstroem, T and Vobecky, J (2013) Gate commutated thyristor with voltage independent maximum controllable current. IEEE Electron Device Letters, 34. pp. 954-956. ISSN 0741-3106Full text not available from this repository.
In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage. © 1980-2012 IEEE.
|Uncontrolled Keywords:||Gate commutated thyristor maximum controllable current safe operating area thyristor wafer modeling|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:24|
|Last Modified:||08 Dec 2014 02:17|