CUED Publications database

Gate commutated thyristor with voltage independent maximum controllable current

Lophitis, N and Antoniou, M and Udrea, F and Nistor, I and Rahimo, MT and Arnold, M and Wikstroem, T and Vobecky, J (2013) Gate commutated thyristor with voltage independent maximum controllable current. IEEE Electron Device Letters, 34. pp. 954-956. ISSN 0741-3106

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Abstract

In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage. © 1980-2012 IEEE.

Item Type: Article
Uncontrolled Keywords: Gate commutated thyristor maximum controllable current safe operating area thyristor wafer modeling
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:24
Last Modified: 08 Dec 2014 02:17
DOI: 10.1109/LED.2013.2267552