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Characterization of the surface acoustic wave devices based on ZnO/nanocrystalline diamond structures

Pang, HF and Pang, HF and Garcia-Gancedo, L and Fu, YQ and Porro, S and Gu, YW and Luo, JK and Zu, XT and Placido, F and Wilson, JIB and Flewitt, AJ and Milne, WI (2013) Characterization of the surface acoustic wave devices based on ZnO/nanocrystalline diamond structures. Physica Status Solidi (A) Applications and Materials Science, 210. pp. 1575-1583. ISSN 1862-6300

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Abstract

Nanocrystalline ZnO films with strong (0002) texture and fine grains were deposited onto ultra-nanocrystalline diamond (UNCD) layers on silicon using high target utilization sputtering technology. The unique characteristic of this sputtering technique allows room temperature growth of smooth ZnO films with a low roughness and low stress at high growth rates. Surface acoustic wave (SAW) devices were fabricated on ZnO/UNCD structure and exhibited good transmission signals with a low insertion loss and a strong side-lobe suppression for the Rayleigh mode SAW. Based on the optimization of the layered structure of the SAW device, a good performance with a coupling coefficient of 5.2% has been realized, promising for improving the microfluidic efficiency in droplet transportation comparing with that of the ZnO/Si SAW device. An optimized temperature coefficient of frequency of -23.4 ppm°C-1 was obtained for the SAW devices with the 2.72 μm-thick ZnO and 1.1 μm-thick UNCD film. Significant thermal effect due to the acoustic heating has been redcued which is related to the temperature stability of the ZnO/UNCD SAW device. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type: Article
Uncontrolled Keywords: diamond nanocrystalline materials sputtering surface acoustic waves thin films ZnO
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 16 Jul 2015 13:14
Last Modified: 30 Aug 2015 02:01
DOI: 10.1002/pssa.201228631