CUED Publications database

Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure

Ma, J and Zhang, JF and Ji, Z and Benbakhti, B and Duan, M and Zhang, W and Zheng, XF and Mitard, J and Kaczer, B and Groeseneken, G and Hall, S and Robertson, J and Chalker, P (2013) Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure. MICROELECTRONIC ENGINEERING, 109. pp. 43-45. ISSN 0167-9317

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Item Type: Article
Uncontrolled Keywords: Ge MOSFETs GeO2 Al2O3 Hole traps NBTI Positive charges Instability Defects High-k dielectrics
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:46
Last Modified: 06 Oct 2014 01:19
DOI: 10.1016/j.mee.2013.03.018