Ma, J and Zhang, JF and Ji, Z and Benbakhti, B and Duan, M and Zhang, W and Zheng, XF and Mitard, J and Kaczer, B and Groeseneken, G and Hall, S and Robertson, J and Chalker, P (2013) Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure. MICROELECTRONIC ENGINEERING, 109. pp. 43-45. ISSN 0167-9317
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|Item Type: ||Article|
|Uncontrolled Keywords: ||Ge MOSFETs GeO2 Al2O3 Hole traps NBTI Positive charges Instability Defects High-k dielectrics|
|Depositing User: ||Cron Job|
|Date Deposited: ||11 Sep 2013 19:03|
|Last Modified: ||16 Sep 2013 01:08|
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