CUED Publications database

Chemical trends and passivation of defects at Al2O3:GaAs/InAs/InP/GaSb interfaces

Guo, Y and Robertson, J (2013) Chemical trends and passivation of defects at Al2O3:GaAs/InAs/InP/GaSb interfaces. MICROELECTRONIC ENGINEERING, 109. pp. 274-277. ISSN 0167-9317

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Item Type: Article
Uncontrolled Keywords: III-V semiconductor MOSFET Interface defects Calculation Passivation
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Div B > Photonics
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 18 May 2016 18:24
Last Modified: 30 Aug 2016 21:46
DOI: