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Chemical trends and passivation of defects at Al2O3:GaAs/InAs/InP/GaSb interfaces

Guo, Y and Robertson, J (2013) Chemical trends and passivation of defects at Al2O3:GaAs/InAs/InP/GaSb interfaces. MICROELECTRONIC ENGINEERING, 109. pp. 274-277. ISSN 0167-9317

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Item Type: Article
Uncontrolled Keywords: III-V semiconductor MOSFET Interface defects Calculation Passivation
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:46
Last Modified: 17 Mar 2014 14:37
DOI: 10.1016/j.mee.2013.03.106

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