Zhuo, VY-Q and Jiang, Y and Zhao, R and Shi, LP and Yang, Y and Chong, TC and Robertson, J (2013) Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer. IEEE Electron Device Letters, 34. pp. 1130-1132. ISSN 0741-3106Full text not available from this repository.
Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaO x devices. © 1980-2012 IEEE.
|Uncontrolled Keywords:||Resistive random access memory (RRAM) TaOx uniformity|
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:45|
|Last Modified:||22 Dec 2014 01:21|