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Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

Zhuo, VY-Q and Jiang, Y and Zhao, R and Shi, LP and Yang, Y and Chong, TC and Robertson, J (2013) Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer. IEEE Electron Device Letters, 34. pp. 1130-1132. ISSN 0741-3106

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Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 11:45
Last Modified: 14 Jul 2014 01:08
DOI:

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