CUED Publications database

Semiconductor laser with a biconical waveguide

Frantsesson, AV and Vasil'ev, PP and Zuev, VS (2000) Semiconductor laser with a biconical waveguide. Journal of Russian Laser Research, 21. pp. 214-222. ISSN 1071-2836

Full text not available from this repository.

Abstract

The propagation losses in the fundamental mode of a bicone made of highly reflecting metal or a dielectric of large refraction were approximately estimated using Leontovich's boundary condition. A 400-fold concentration of the energy flux density lias been obtained in a cross section which is much smaller than λ. Here, the losses are 2.5% at λ = 550 nm in an Ag bicone and 12% in a semiconductor bicone with a band gap of ≈1 eV for hv larger than the band gap. The excitation efficiency of a bicone has been estimated. While not too large, it can be increased significantly using the method proposed in the present paper. The application of the optical bicone for the multiplication of a semiconductor-laser frequency is discussed. The results obtained are also of use in scanning near-field optical microscopy and in experiments on focusing laser pulses of ultrahigh power. © 2000 Plenum/Kluwer Publishing Corporation.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:10
Last Modified: 08 Dec 2014 02:24
DOI: