CUED Publications database

A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors

Tolstoy, G and Peftitsis, D and Rabkowski, J and Nee, H-P and Palmer, PR (2013) A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors. 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013. pp. 728-735.

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Abstract

Silicon Carbide Bipolar Junction Transistors require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200V/40A SiC BJT in a DC-DC boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 63 %. The total reduction of the driver consumption is 2816 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE.

Item Type: Article
Uncontrolled Keywords: Base Driver Bipolar Junction Transistor BJT Discretized Base Driver Driver Proportional Base driver Proportional Driver SiC Silicon Carbide
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:08
Last Modified: 08 Dec 2014 02:17
DOI: 10.1109/ECCE-Asia.2013.6579182