Tolstoy, G and Peftitsis, D and Rabkowski, J and Nee, HP and Palmer, PR (2013) A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors. 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013. pp. 728-735.Full text not available from this repository.
Silicon Carbide Bipolar Junction Transistors require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200V/40A SiC BJT in a DC-DC boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 63 %. The total reduction of the driver consumption is 2816 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE.
|Uncontrolled Keywords:||Base Driver Bipolar Junction Transistor BJT Discretized Base Driver Driver Proportional Base driver Proportional Driver SiC Silicon Carbide|
|Depositing User:||Unnamed user with email firstname.lastname@example.org|
|Date Deposited:||16 Jul 2015 14:07|
|Last Modified:||13 Oct 2015 23:21|