He, XL and Garcia-Gancedo, L and Jin, PC and Zhou, J and Flewitt, AJ and Milne, WI and Luo, JK (2013) A single FBAR-based temperature and pressure sensors. Key Engineering Materials, 562-56. pp. 188-191. ISSN 1013-9826Full text not available from this repository.
A novel temperature and pressure sensor based on a single film bulk acoustic resonator (FBAR) is designed. This FBAR support two resonant modes, which response opposite to the change of temperature. By sealed the back cavity of a back-trench membrane type FBAR with silicon wafer, an on-chip single FBAR sensor suitable for measuring temperature and pressure simultaneously is proposed. For unsealed device, the experimental results show that the first resonant mode has a temperature coefficient of frequency (TCF) of 69.5ppm/K, and the TCF of the second mode is -8.1ppm/K. After sealed the back trench, it can be used as a pressure sensor, the pressure coefficient of frequency (PCF) for the two resonant mode is -17.4ppm/kPa and -6.1 ppm/kPa respectively, both of them being more sensitive than other existing pressure sensors. © 2013 Trans Tech Publications Ltd, Switzerland.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||09 Dec 2016 18:29|
|Last Modified:||27 Feb 2017 05:13|