Weatherup, RS and Baehtz, C and Dlubak, B and Bayer, BC and Kidambi, PR and Blume, R and Schloegl, R and Hofmann, S (2013) Introducing carbon diffusion barriers for uniform, high-quality graphene growth from solid sources. Nano Lett, 13. pp. 4624-4631.Full text not available from this repository.
Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform monolayer graphene at 600 °C with domain sizes exceeding 50 μm, and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.
|Divisions:||Div B > Solid State Electronics and Nanoscale Science|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 11:28|
|Last Modified:||21 Apr 2014 01:09|
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