Napoli, E and Pathirana, V and Udrea, F (2006) Modeling turn-off voltage rise in SOI LIGBT. Journal of Computational Electronics, 5. pp. 181-186. ISSN 1569-8025Full text not available from this repository.
The behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise. In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT. © Springer Science + Business Media LLC 2006.
|Uncontrolled Keywords:||Insulated gate bipolar transistor (IGBT) Power semiconductor devices Semiconductor device modeling Silicon-on-insulator (SOI) technology Switching transient|
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron Job|
|Date Deposited:||07 Mar 2014 12:04|
|Last Modified:||08 Dec 2014 02:17|