Napoli, E and Pathirana, V and Udrea, F (2006) Modeling turn-off voltage rise in SOI LIGBT. Journal of Computational Electronics, 5. pp. 181-186. ISSN 1569-8025Full text not available from this repository.
The behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise. In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT. © Springer Science + Business Media LLC 2006.
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|Date Deposited:||15 Dec 2015 13:21|
|Last Modified:||30 Apr 2016 00:36|