CUED Publications database

Modeling turn-off voltage rise in SOI LIGBT

Napoli, E and Pathirana, V and Udrea, F (2006) Modeling turn-off voltage rise in SOI LIGBT. Journal of Computational Electronics, 5. pp. 181-186. ISSN 1569-8025

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The behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise. In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT. © Springer Science + Business Media LLC 2006.

Item Type: Article
Uncontrolled Keywords: Insulated gate bipolar transistor (IGBT) Power semiconductor devices Semiconductor device modeling Silicon-on-insulator (SOI) technology Switching transient
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron job
Date Deposited: 16 Jul 2015 14:00
Last Modified: 30 Nov 2015 16:58
DOI: 10.1007/s10825-006-8841-2