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The elimination of surface cross-hatch from relaxed, limited-area Si<inf>1-x</inf>Ge<inf>x</inf> buffer layers

Hammond, R and Phillips, PJ and Whall, TE and Parker, EHC and Graf, T and Von Känel, H and Shields, AJ (1997) The elimination of surface cross-hatch from relaxed, limited-area Si<inf>1-x</inf>Ge<inf>x</inf> buffer layers. Applied Physics Letters, 71. pp. 2517-2519. ISSN 0003-6951

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Abstract

The influence of lateral dimensions on the relaxation and surface topography of linearly graded Si 1-x Ge x buffer layers has been investigated. A dramatic change in the relaxation mechanism has been observed for depositions on Si mesa pillars of lateral dimensions 10 μm and below. Misfit dislocations are able to extend unhindered and terminate at the edges of the growth zone, yielding a surface free of cross-hatch. For lateral dimensions in excess of 10 μm orthogonal misfit interactions occur and relaxation is dominated by the modified Frank-Read (MFR) mechanism. The stress fields associated with the MFR dislocation pile-ups result in a pronounced cross-hatch topography. © 1997 American Institute of Physics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:23
Last Modified: 05 Sep 2017 01:51
DOI: