CUED Publications database

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Ullah, AR and Joyce, HJ and Burke, AM and Wong-Leung, J and Tan, HH and Jagadish, C and Micolich, AP (2013) Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors. Physica Status Solidi - Rapid Research Letters, 7. pp. 911-914. ISSN 1862-6254

Full text not available from this repository.

Abstract

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type: Article
Uncontrolled Keywords: InAs Nanowire FETs Wurtzite Zincblende
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:04
Last Modified: 08 Dec 2014 02:16
DOI: 10.1002/pssr.201308014