Ullah, AR and Joyce, HJ and Burke, AM and Wong-Leung, J and Tan, HH and Jagadish, C and Micolich, AP (2013) Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors. Physica Status Solidi - Rapid Research Letters, 7. pp. 911-914. ISSN 1862-6254Full text not available from this repository.
We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Uncontrolled Keywords:||InAs Nanowire FETs Wurtzite Zincblende|
|Depositing User:||Cron job|
|Date Deposited:||04 Feb 2015 22:39|
|Last Modified:||05 Feb 2015 00:53|