CUED Publications database

All-chemical vapor deposited graphene/silicon nitride TFTs

Milne, WI and Cole, MT and Drapeko, M and Kidambi, P and Ying, K and Lee, S and Pfaendler, SM-L and Teo, KBK and Hofmann, S and Nathan, A (2012) All-chemical vapor deposited graphene/silicon nitride TFTs. ECS Transactions, 50. pp. 217-221. ISSN 1938-5862

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Abstract

All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm 2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through allchemical vapor deposition processes. © The Electrochemical Society.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 07 Mar 2014 12:00
Last Modified: 08 Dec 2014 02:16
DOI: 10.1149/05008.0217ecst