Milne, WI and Cole, MT and Drapeko, M and Kidambi, P and Ying, K and Lee, S and Pfaendler, SML and Teo, KBK and Hofmann, S and Nathan, A (2012) All-chemical vapor deposited graphene/silicon nitride TFTs. ECS Transactions, 50. pp. 217-221. ISSN 1938-5862Full text not available from this repository.
All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm 2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through allchemical vapor deposition processes. © The Electrochemical Society.
|Divisions:||Div B > Electronics, Power & Energy Conversion|
|Depositing User:||Cron job|
|Date Deposited:||16 Jul 2015 13:14|
|Last Modified:||28 Nov 2015 10:28|