CUED Publications database

800V lateral IGBT in bulk Si for low power compact SMPS applications

Trajkovic, T and Udugampola, N and Pathirana, V and Camuso, G and Udrea, F and Amaratunga, GAJ (2013) 800V lateral IGBT in bulk Si for low power compact SMPS applications. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. pp. 401-404. ISSN 1063-6854

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An 800V rated lateral IGBT for high frequency, low-cost off-line applications has been developed. The LIGBT features a new method of adjusting the bipolar gain, based on a floating N+ stripe in front of the P+ anode/drain region. The floating N+ layer enhances the carrier recombination at the anode/drain side of the drift region resulting in a very significant decrease in the turn-off speed and substantially lower overall losses. Switching speeds as low as 140ns at 25 C and 300ns at 125 C have been achieved with corresponding equivalent Rdson at 125 C below 90mω.cm . A fully operational AC-DC converter using a controller with an integrated LIGBT+depletion mode MOSFET chip has been designed and qualified in plastic SOP8 packages and used in 5W, 65kHz SMPS applications. The device is fabricated in 0.6μm bulk silicon CMOS technology without any additional masking steps. © 2013 IEEE. o o o 2

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:17
Last Modified: 13 Apr 2021 10:03
DOI: 10.1109/ISPSD.2013.6694430