CUED Publications database

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

Nedic, S and Tea Chun, Y and Hong, WK and Chu, D and Welland, M (2014) High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate. Applied Physics Letters, 104. ISSN 0003-6951

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Abstract

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼105, a gate leakage current below ∼300 pA, and excellent retention characteristics for over 104 s. © 2014 AIP Publishing LLC.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:06
Last Modified: 25 Feb 2021 06:42
DOI: 10.1063/1.4862666