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A thermal processing system for semiconductors and other materials using two or more electron beams

UNSPECIFIED (1982) A thermal processing system for semiconductors and other materials using two or more electron beams. doi:.

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Abstract

In apparatus and methods for thermal processing of semiconductors and other materials in order to change their properties, two electron beams are directed from opposite sides of e.g. a silicon wafer which is thermally isolated as far as possible. By combining the heating effects of the two beams the temperature distribution that is required to modify the wafer is achieved. In one embodiment, one beam is scanned rapidly in a raster over the whole wafer to heat it while the second beam is formed into a line and scanned to provide further heating. This combination is used to modify a poly-crystalline silicon film into single crystal material. In other embodiments the second beam is formed into a spot a square or other shape to obtain the desired temperature distribution.

Item Type: Patent
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 20:15
Last Modified: 27 Jul 2017 05:38
DOI: