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Optimization of the a-SiC p-layer in a-Si:H-based n-i-p photodiodes

Vygranenko, Y and Sazonov, A and Heiler, G and Tredwell, T and Vieira, M and Nathan, A (2010) Optimization of the a-SiC p-layer in a-Si:H-based n-i-p photodiodes. Materials Research Society Symposium Proceedings, 1245. pp. 377-382. ISSN 0272-9172

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Our work is aimed at enhancing the external quantum efficiency (EQE) of n-i-p photodiodes by reducing the absorption losses in the p-layer and the recombination losses in the p-i interface. We have applied boron-doped and undoped hydrogenated amorphous silicon carbon alloy (a-SiC:H) grown in hydrogen-diluted, silane-methane plasma to both the p-layer and undoped buffer layer, thus tailoring the p-i interface. The current-voltage, capacitance-voltage, and spectral-response characteristics of fabricated photodiodes are correlated with the doping level, optical band gap, and deposition conditions for a-SiC:H layers. The optimized device exhibits a leakage current of about 110 pA/cm at the reverse bias of 5 V, and a peak value of 89% EQE at a wavelength of 530 nm. At shorter wavelengths, the EQE decreases down to 56% at a 400 nm wavelength. Calculations of transmission/reflection losses at the front of the photodiode show that observed short-wavelength sensitivity enhancement can be attributed to improved separation of electron-hole pairs in the p-layer depletion region. © 2010 Materials Research Society. 2

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:07
Last Modified: 13 Apr 2021 07:13
DOI: 10.1557/proc-1245-a18-01