CUED Publications database

Nanocrystalline silicon thin film transistors

Rad, MRE and Chaji, GR and Lee, CH and Striakhilev, D and Sazonov, A and Nathan, A (2010) Nanocrystalline silicon thin film transistors. ECS Transactions, 33. pp. 205-212. ISSN 1938-5862

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Abstract

We review performance characteristics of top- and bottom-gate nanocrystalline silicon (nc-Si) thin film transistors (TFTs). Top gate TFTs with nc-Si active layer of nearly 80% crystallinity along with a silicon oxide gate dielectric produce high electron mobilities; values two orders higher than the amorphous silicon counterpart. In contrast, bottom-gate TFTs with silicon nitride gate dielectric and nc-Si active layer of similar crystallinity yield a mobility that is only marginally better than amorphous silicon TFT. However, they are highly stable with no visible presence of defect state creation in the active layer. In contrast, top-gate TFTs suffer from severe charge trapping in the low quality oxide gate dielectric. ©The Electrochemical Society.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:07
Last Modified: 30 Mar 2021 06:19
DOI: 10.1149/1.3481238