CUED Publications database

Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes

Vygranenko, Y and Fathi, E and Sazonov, A and Vieira, M and Nathan, A (2010) Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes. Solar Energy Materials and Solar Cells, 94. pp. 1860-1863. ISSN 0927-0248

Full text not available from this repository.

Abstract

We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 °C. Film properties were studied as a function of trimethylboron-to- silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p nc-Si:H as a window layer, complete pin structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers. © 2010 Elsevier B.V. +

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:07
Last Modified: 08 Apr 2021 06:06
DOI: 10.1016/j.solmat.2010.06.044