CUED Publications database

Phototransistor with nanocrystalline Si/amorphous Si bilayer channel

Vygranenko, Y and Nathan, A and Vieira, M and Sazonov, A (2010) Phototransistor with nanocrystalline Si/amorphous Si bilayer channel. Applied Physics Letters, 96. ISSN 0003-6951

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We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The phototransistor with channel length of 24 microns and photosensitive area of 1.4 mm shows an off-current of about 1 pA, and high photoconductive gain in the subthreshold region. Measurements of the quantum efficiency at different incident light intensities and biasing conditions, along with spectral-response characteristics, and threshold voltage stability characterization demonstrate the feasibility of the phototransistor for low light level detection. © 2010 American Institute of Physics. 2

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:07
Last Modified: 13 Apr 2021 07:12
DOI: 10.1063/1.3422479