CUED Publications database

Light-induced metastability in thin nanocrystalline silicon films

Bauza, M and Mandal, NP and Ahnood, A and Sazonov, A and Nathan, A (2009) Light-induced metastability in thin nanocrystalline silicon films. Philosophical Magazine, 89. pp. 2531-2539. ISSN 1478-6435

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Abstract

This paper examines the influence of light-induced metastability on conduction in thin nc-Si:H films. To investigate the role of surface effects, two sample types are considered: one with the surface intentionally oxidized to form an oxide cap layer and the other with etched oxide layer. Both the Staebler-Wronski effect (SWE) and persistent photo-current (PPC) have been observed, albeit at different phases of light soaking. For the nc-Si:H sample with a cap layer, we attribute the presence of SWE and PPC to defect generation and interface charge trapping, while, in the absence of the cap layer, these effects could be caused by unidentified photo-structural changes and defect generation. © 2009 Taylor & Francis.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:07
Last Modified: 01 Aug 2017 03:04
DOI: