CUED Publications database

Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements

Ahnood, A and Chaji, GR and Sazonov, A and Nathan, A (2009) Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements. Applied Physics Letters, 95. ISSN 0003-6951

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Abstract

The field effect (FE) mobility of thin film transistors is normally extracted using static measurement methods, which inherently rely on the assumption that the device remains stable during the measurement duration. However, these devices, particularly those based on emerging materials, can show large instability during the measurement, typically exhibiting hysteresis in the static characteristics. This letter looks at the effect of threshold voltage shift in FE mobility extracted using the conventional method, and introduces an alternative and more accurate technique of measuring device characteristics. The technique decouples the effect of transient phenomena, thus permitting extraction of the true device FE mobility, which turns out to be either over or underestimated depending on the magnitude and direction of threshold voltage shift. © 2009 American Institute of Physics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:08
Last Modified: 23 Nov 2017 04:01
DOI: