Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology

Udrea, F and Chan, SSM and Thomson, J and Keller, S and Amaratunga, GAJ and Millington, AD and Waind, PR and Crees, DE (1997) Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology. European Solid-State Device Research Conference. pp. 504-507. ISSN 1930-8876

Abstract

This paper presents preliminary results towards developing the next generation of Insulated Gate Bipolar Transistors for high voltage applications. Technological issues such as the trench profile, the gate oxide quality, the trench inversion layer mobility and lay-out design are discussed. Optimization of 1.8 kV Trench IGBTs using extensive numerical simulations and physical analysis is carried out. New termination techniques are proposed.