CUED Publications database

2-D modelling and optimisation of trench insulated gate bipolar transistors (TIGBT)

Udrea, F and Amaratunga, GAJ (2014) 2-D modelling and optimisation of trench insulated gate bipolar transistors (TIGBT). In: UNSPECIFIED pp. 291-294..

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Abstract

A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extensive numerical simulations, analytical modeling using a mathematically developed PIN diode-PNP transistor model and optimisation of Trench IGBTs are carried out. It is concluded that an optimised Trench IGBT is potentially the leading structure of the next generation of high voltage devices.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 20:03
Last Modified: 18 Feb 2021 15:23
DOI: