CUED Publications database

Inversion layer injection devices - A new class of semiconductor devices

Udrea, F and Amaratunga, GAJ and Humphrey, J and Clark, J and Evans, A (2014) Inversion layer injection devices - A new class of semiconductor devices. In: UNSPECIFIED pp. 241-244..

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Abstract

This paper reports the experimental evidence of a new minority carrier injection mechanism. The new physical mechanism earlier proposed by us is based on the use of a MOS inversion layer as a minority carrier injector as part of a dynamic junction. Unlike in conventional devices, the physical existence of the emitter and the carrier injection of such a junction is entirely controlled by the MOS gate. A new class of semiconductor devices based on inversion layer injection is presented.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 20:03
Last Modified: 18 Feb 2021 15:23
DOI: