CUED Publications database

Engineering Schottky contacts in open-air fabricated heterojunction solar cells to enable high performance and ohmic charge transport.

Hoye, RLZ and Heffernan, S and Ievskaya, Y and Sadhanala, A and Flewitt, A and Friend, RH and MacManus-Driscoll, JL and Musselman, KP (2014) Engineering Schottky contacts in open-air fabricated heterojunction solar cells to enable high performance and ohmic charge transport. ACS Appl Mater Interfaces, 6. pp. 22192-22198.

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Abstract

The efficiencies of open-air processed Cu2O/Zn(1-x)Mg(x)O heterojunction solar cells are doubled by reducing the effect of the Schottky barrier between Zn(1-x)Mg(x)O and the indium tin oxide (ITO) top contact. By depositing Zn(1-x)Mg(x)O with a long band-tail, charge flows through the Zn(1-x)Mg(x)O/ITO Schottky barrier without rectification by hopping between the sub-bandgap states. High current densities are obtained by controlling the Zn(1-x)Mg(x)O thickness to ensure that the Schottky barrier is spatially removed from the p-n junction, allowing the full built-in potential to form, in addition to taking advantage of the increased electrical conductivity of the Zn(1-x)Mg(x)O films with increasing thickness. This work therefore shows that the Zn(1-x)Mg(x)O window layer sub-bandgap state density and thickness are critical parameters that can be engineered to minimize the effect of Schottky barriers on device performance. More generally, these findings show how to improve the performance of other photovoltaic system reliant on transparent top contacts, e.g., CZTS and CIGS.

Item Type: Article
Uncontrolled Keywords: Cu2O solar cells Schottky barrier electrochemical deposition spatial atmospheric atomic layer deposition zinc magnesium oxide
Subjects: UNSPECIFIED
Divisions: Div C > Materials Engineering
Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:09
Last Modified: 07 Sep 2017 01:43
DOI: