CUED Publications database

Memory effects of carbon nanotube-based field effect transistors

Yang, DJ and Zhang, Q and Wang, SG and Zhong, GF (2004) Memory effects of carbon nanotube-based field effect transistors. DIAMOND AND RELATED MATERIALS, 13. pp. 1967-1970. ISSN 0925-9635

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Item Type: Article
Uncontrolled Keywords: carbon nanotubes field effect transistor memory threshold voltage
Subjects: UNSPECIFIED
Divisions: Div B > Electronic Devices & Materials
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 17 Jul 2017 19:54
Last Modified: 21 Nov 2017 02:39
DOI: