CUED Publications database

Preparation and characterization of high quality diamond films by DC arc plasma jet CVD method

Zhong, G and Shen, F and Lü, F and Tang, W (1999) Preparation and characterization of high quality diamond films by DC arc plasma jet CVD method. Journal of University of Science and Technology Beijing: Mineral Metallurgy Materials (Eng Ed), 6. pp. 281-284. ISSN 1005-8850

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Abstract

Under optimal conditions free-standing high quality diamond films were prepared by DC arc plasma jet CVD method at a growth rate of 7-10 μm/h. Surface and cross section morphologies of the diamond films were observed by SEM. Raman spectrometer was used to characterize the quality of diamond films. The IR transmittivity measured by IR spectrometer is close to the theoretical value of about 71% in the far infrared band. The thermal conductivity measured by photothermal deflection exceeds 18 W/cm·K. 〈110〉 is the preferential growth orientation of the films detected by X-ray diffractometer. As s result, the extremely high temperature of DC arc plasma jet can produce supersaturated atomic hydrogen, which played an important role in the process for the deposition of high quality diamond films.

Item Type: Article
Uncontrolled Keywords: DC plasma jet CVD diamond films free-standing characterization
Subjects: UNSPECIFIED
Divisions: Div B > Electronic Devices & Materials
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 20:38
Last Modified: 07 Mar 2019 12:38
DOI: